Infineon IPD90N08S4-05: High-Performance N-Channel Power MOSFET for Automotive and Industrial Applications

The Infineon IPD90N08S4-05 represents a significant advancement in power MOSFET technology, engineered to meet the rigorous demands of modern automotive and industrial systems. This N-channel MOSFET is built on Infineon’s proprietary OptiMOS™ 5 power technology, which delivers an exceptional balance of low on-state resistance and high switching performance. With a maximum drain-source voltage (VDS) of 80 V and a continuous drain current (ID) of 90 A, this device is optimized for high-power applications where efficiency and reliability are paramount.

A key feature of the IPD90N08S4-05 is its extremely low typical RDS(on) of just 1.8 mΩ at 10 V. This ultra-low resistance minimizes conduction losses, leading to higher overall system efficiency and reduced heat generation. Such performance is critical in applications like electric power steering (EPS), braking systems, and engine management in vehicles, as well as in industrial motor drives and power supplies. The MOSFET’s low gate charge (Qg) also ensures fast switching capabilities, which is essential for high-frequency operation, further enhancing energy efficiency in switching power converters.

The device is housed in a SuperSO8 package, which offers an excellent power-to-size ratio. This compact footprint allows for higher power density in space-constrained applications, making it ideal for advanced automotive electronics and compact industrial equipment. Additionally, the MOSFET is AEC-Q101 qualified, ensuring it meets the strict quality and reliability standards required for automotive components. Its robustness is further demonstrated by its high avalanche ruggedness and excellent thermal performance, which contribute to prolonged operational life under harsh conditions.

In industrial contexts, the IPD90N08S4-05 excels in power management solutions, including DC-DC converters and load switches. Its ability to handle high currents with minimal losses makes it a preferred choice for designers aiming to improve system efficiency and reduce energy consumption. The combination of high performance, reliability, and compact design positions this MOSFET as a versatile solution for a wide range of high-power applications.

ICGOO FIND: The Infineon IPD90N08S4-05 is a top-tier N-channel power MOSFET that sets a high standard for efficiency and reliability in automotive and industrial sectors. Its ultra-low RDS(on), high current handling, and AEC-Q101 qualification make it an outstanding choice for demanding power applications.

Keywords: OptiMOS™ 5, Low RDS(on), AEC-Q101 Qualified, Automotive Applications, Power Efficiency.