Infineon IPB60R190C6ATMA1 CoolMOS™ Power Transistor: Datasheet, Application, and Features

The Infineon IPB60R190C6ATMA1 stands as a prime example of advanced power semiconductor technology, belonging to the renowned CoolMOS™ C6 series. This high-voltage MOSFET is engineered to deliver exceptional efficiency and reliability in demanding switching applications, setting a new benchmark for performance in its class.

Key Features and Benefits

At the heart of this transistor's performance is its superjunction technology, which drastically reduces on-state resistance and switching losses. The part number decodes its core characteristics: 600V voltage rating, 190mΩ nominal RDS(on), and a TO-263 (D2PAK) surface-mount package. A standout feature is its ultra-low gate charge (Qg) and exceptional reverse recovery behavior, which are critical for minimizing driving losses and achieving high-frequency operation. Furthermore, it is designed with high robustness and avalanche energy capability, ensuring reliable operation under harsh conditions and transient voltage spikes.

Primary Applications

The IPB60R190C6ATMA1 is a versatile component optimized for a wide array of high-efficiency power conversion systems. Its primary applications include:

Switch-Mode Power Supplies (SMPS): Particularly in server, telecom, and industrial power supplies where efficiency is paramount.

Power Factor Correction (PFC) stages: Its fast switching speed and low losses make it ideal for both interleaved and single-stage boost PFC circuits.

Solar inverters and UPS systems: Where high reliability and efficiency directly impact overall system performance.

Motor control and lighting solutions: For driving inductive loads efficiently.

Datasheet Overview

The official datasheet is the ultimate source for design-in information. It provides crucial details such as:

Absolute Maximum Ratings: Including drain-source voltage (VDS = 600V), continuous drain current (ID = 11.5A @ 100°C), and maximum avalanche current.

Electrical Characteristics: Detailed charts and graphs for RDS(on), gate threshold voltage, capacitance values, and switching times across various temperatures and currents.

Safe Operating Area (SOA): Both forward and reverse bias SOA graphs are provided to ensure safe operation within the device's limits.

Thermal Characteristics: Specifications for junction-to-case thermal resistance, which is vital for proper heatsink design.

ICGOOODFIND

The Infineon IPB60R190C6ATMA1 CoolMOS™ C6 transistor is a top-tier solution for designers seeking to maximize power density and efficiency. Its blend of extremely low RDS(on), minimal switching losses, and high ruggedness makes it an excellent choice for next-generation power supplies, renewable energy systems, and industrial drives. By leveraging its advanced features, engineers can create smaller, cooler, and more efficient power electronics.

Keywords:

CoolMOS™ C6

High-Efficiency

Superjunction Technology

Power Factor Correction (PFC)

Switching Losses